Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5523D | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-1% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
BU2523DF | Silicon Diffused Power Transistor | Philips-Semiconductors | - | - | - | - | 67 K |
BU2523DX | Silicon Diffused Power Transistor | Philips-Semiconductors | - | - | - | - | 69 K |
BU2523DX | 1500 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
BU4523DF | 1500 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 21 K |
BU4523DW | Silicon Diffused Power Transistor | Philips-Semiconductors | - | - | - | - | 24 K |
BU4523DW | Silicon Diffused Power Transistor | Philips-Semiconductors | - | - | - | - | 24 K |
BU4523DX | 1500 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 23 K |
IRF7523D1 | FETKY MOSFET and schottky diode. VDSS = 30V, RDS(on) = 0.11 Ohm, schottky Vf = 039V. | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 204 K |
NJM2523D | 3-input/2-input video switch | New-Japan-Radio-Co--Ltd--JRC | DIP | 16 | -40°C | 85°C | 190 K |
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