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523D

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5523D0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-1% tolerance.distributor-2-65°C200°C243 K
BU2523DFSilicon Diffused Power TransistorPhilips-Semiconductors----67 K
BU2523DXSilicon Diffused Power TransistorPhilips-Semiconductors----69 K
BU2523DX1500 V, silicon diffused power transistorPhilips-SemiconductorsSOT3--55 K
BU4523DF1500 V, silicon diffused power transistorPhilips-SemiconductorsSOT3--21 K
BU4523DWSilicon Diffused Power TransistorPhilips-Semiconductors----24 K
BU4523DWSilicon Diffused Power TransistorPhilips-Semiconductors----24 K
BU4523DX1500 V, silicon diffused power transistorPhilips-SemiconductorsSOT3--23 K
IRF7523D1FETKY MOSFET and schottky diode. VDSS = 30V, RDS(on) = 0.11 Ohm, schottky Vf = 039V.International-RectifierMicro88-55°C150°C204 K
NJM2523D3-input/2-input video switchNew-Japan-Radio-Co--Ltd--JRCDIP16-40°C85°C190 K
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