| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5307 | 100 volt, current regulator diode | distributor | - | 2 | -65°C | 175°C | 30 K |
| 1N5307 | Regulator current:2.40; 500mW; current limiter field effect diode | distributor | - | - | -55°C | 175°C | 37 K |
| 2N5307 | 400mW NPN darlington amplifier | distributor | - | 3 | -55°C | 150°C | 91 K |
| HUF75307D3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 219 K |
| HUF75307D3S | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 219 K |
| HUF75307T3ST | 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 175 K |
| HUFA75307D3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 217 K |
| HUFA75307D3S | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 217 K |
| HUFA75307T3ST | 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 174 K |
| NTE5307 | Silicon bridge rectifier, 1.5 A. Maximum recurrent peak reverse voltage Vrrm = 1000V. | distributor | - | 4 | -55°C | 125°C | 17 K |
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