| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5530A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
| BL-R4530A-T | Hi-eff red, standard LED lamp (rectangular type) | distributor | - | 2 | - | - | 1 M |
| BU4530AW | Silicon diffused power transistor. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 61 K |
| FDD6530A | 20V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 82 K |
| IRFS530A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 261 K |
| IRFW530A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 259 K |
| IRL530A | Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 233 K |
| IRLI530A | Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 273 K |
| IRLS530A | Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 259 K |
| IRLW530A | Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 273 K |
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