| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5366A | 39 V, 5 W silicon zener diode | distributor | D2A | 2 | -55°C | 175°C | 31 K |
| 1N5366B | 39V 5W zener diode | distributor | Molded Plastic | 2 | -55°C | 175°C | 63 K |
| 1N5366B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 39V, Izt = 30mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5366B | 39 V, 0.5 A, 5 W, glass passivated junction silicon zener diode | distributor | - | 2 | -55°C | 150°C | 267 K |
| 1SMC5366 | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 39 V. Test current Izt = 30 mA. | distributor | - | 2 | -55°C | 150°C | 122 K |
| 1SMC5366 | 39 V, 0.5 A, 5 W, surface mount silicon zener diode | distributor | - | 2 | -55°C | 150°C | 275 K |
| CD5366B | 39 V, Zener diode chip | distributor | - | - | -65°C | 200°C | 82 K |
| CMZ5366B | 39 V, High power zener diode | distributor | SMC | - | -65°C | 150°C | 149 K |
| H2N5366 | 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 35 K |
| SMBJ5366B | Pd=5.0W, Vz=39V zener diode | distributor | HSMB | - | - | - | 1 M |
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