Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5386 | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 114 K |
1N5386A | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 114 K |
1N5386B | 180 V, 5 Watt surmetic 40 silicon zener diode | distributor | - | 2 | -65°C | 200°C | 428 K |
1N5386B | Silicon power Z-diode | Diotec-Elektronische | - | 2 | -50°C | 150°C | 21 K |
1N5386B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 180V, Izt = 5.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
CMZ5386B | 180 V, High power zener diode | distributor | SMC | - | -65°C | 150°C | 149 K |
LC75386NE | Electronic volume and tone control | SANYO-Electric-Co--Ltd- | QFP64E | 64 | -40°C | 85°C | 320 K |
SGA-5386 | DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz | distributor | - | 4 | -40°C | 85°C | 223 K |
SMBG5386B | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 242 K |
SMBJ5386B | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 242 K |
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