Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BUK555-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 25 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 69 K |
BUK555-100B | PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm | Philips-Semiconductors | - | 3 | -55°C | 175°C | 54 K |
BUK555-100B | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 22 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 69 K |
MA4ST555-134 | High Q hyperabrupt tuning varactor, 15 x 15 mil chip diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | 89 K |
1 |
---|