Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5550 | Glass Passivated Junction Rectifier | General-Semiconductor | G4 | - | - | - | 53 K |
1N5550 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_(WT) | - | - | - | 78 K |
1N5550 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | E | - | - | - | 46 K |
1N5550 | 200 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
1N5550US | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_MELF(WT) | - | - | - | 78 K |
1N5550US | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | MELF_E | - | - | - | 46 K |
2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
2N5550S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 152 K |
2SC5550 | Silicon NPN triple diffused type transistor for high speed switching applications for inverter lighting system | Toshiba | - | 3 | - | - | 176 K |
MMBT5550LT1 | High voltage transistor | Motorola | - | 3 | -55°C | 150°C | 199 K |
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