| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 34 K |
| 5962H9655501VEX | RadHard MSI: SMD. 4-bit synchronous counter. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). | distributor | Ceramic DIP | 16 | -55°C | 125°C | 10 M |
| HN/2N5550 | 140 V, NPN silicon expitaxial planar transistor | distributor | - | 3 | - | - | 131 K |
| KST5550 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 56 K |
| MMBT5550 | 140 V, high voltage transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 84 K |
| MMBT5550 | 140 V, high voltage transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 84 K |
| MMBT5550LT1 | 140 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| NTE5550 | Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 50V. Forward current 25A. | distributor | TO220 | 3 | -40°C | 125°C | 20 K |
| PMST5550 | NPN high-voltage transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 68 K |
| TSLM5550 | Chemical-optical sensor platform. Wavelength 555 nm. | distributor | - | 16 | 0°C | 70°C | 82 K |
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