| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5551 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_(WT) | - | - | - | 78 K |
| 1N5551 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | E | - | - | - | 46 K |
| 1N5551US | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_MELF(WT) | - | - | - | 78 K |
| 2N5551 | 150 V, NPN epitaxial planar selicon high voltage transistor | distributor | - | 3 | -55°C | 150°C | 57 K |
| CMPT5551 | NPN silicon transistor | distributor | SOT | 3 | -65°C | 150°C | 78 K |
| CXT5551 | Surface mount NPN silicon transistor | distributor | SOT | 3 | -65°C | 150°C | 100 K |
| CZT5551 | NPN silicon transistor | distributor | SOT | 4 | -65°C | 150°C | 93 K |
| MMBT5551LT1 | High voltage transistor | Motorola | - | 3 | -55°C | 150°C | 199 K |
| WMBT5551LT1 | NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 36 K |
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