| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5551 | 400 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
| 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| 2N5551 | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 75 K |
| MMBT5551 | 180V; 200mA NPN small signal surface mount transistor. Ideal for medium power application and switching | distributor | - | 3 | -55°C | 150°C | 47 K |
| MMBT5551 | 180 V, NPN small signal surface mount transistor | distributor | - | 3 | -55°C | 150°C | 170 K |
| MMBT5551 | 140 V, high voltage transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 84 K |
| MMBT5551 | 140 V, high voltage transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 84 K |
| MMBT5551LT1 | 140 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| MMDT5551 | 180V; 200mA dual NPN small signal surface mount transistor. Ideal for medium power amplification and switching | distributor | - | 6 | -55°C | 150°C | 41 K |
| SZ5551 | 51 V, 3 W, surface mount silicon zener diode | distributor | SMA | 2 | -55°C | 150°C | 28 K |
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