| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5597 | High Voltage Rectifier | Microsemi-Corporation | DE | - | - | - | 111 K |
| 2SC5597 | Silicon NPN triple diffusion mesa type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 54 K |
| 5962-9559701MPA | 12.6V; 0.9-1.3W; low distortion, wide bandwidth voltage feedback clamp amplifier. For ADC buffer, IF/RF signal processing and high quality imaging | Analog-Devices | CERDIP | 8 | -55°C | 125°C | 436 K |
| NTE5597 | Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 1600V. RMS on-state current It(rms) = 780A. | distributor | - | 3 | -40°C | 125°C | 21 K |
| SN55976A1WD | 9-CHANNEL DIFFERENTIAL TRANSCEIVER | Texas-Instruments | WD | 56 | -55°C | 125°C | 459 K |
| SNJ55976A1WD | 9-CHANNEL DIFFERENTIAL TRANSCEIVER | Texas-Instruments | WD | 56 | -55°C | 125°C | 459 K |
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