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55n06

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQB55N0660V N-Channel MOSFETFairchild-Semiconductor----601 K
FQP55N0660V N-Channel MOSFETFairchild-Semiconductor----659 K
MTB55N06ZTMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C146 K
MTP55N06ZTMOS E-FET power field effect transistorMotorola-4-55°C150°C143 K
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