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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS7C256-12TC5V 32K x 8 CM0S SRAM (common I/O), 12ns access timeAlliance-Semiconductor-Corporationplastic TSOP280°C70°C133 K
AS7C256-12TI5V 32K x 8 CM0S SRAM (common I/O), 12ns access timeAlliance-Semiconductor-Corporationplastic TSOP28-40°C85°C133 K
AS7C3256-12TC3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access timeAlliance-Semiconductor-Corporationplastic TSOP280°C70°C133 K
AS7C3256-12TI3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access timeAlliance-Semiconductor-Corporationplastic TSOP28-40°C85°C133 K
M4A3-512/256-12FAC12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/256-12FAC12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/256-12FAI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M5-512/256-12AC12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)Lattice-Semiconductor-CorporationBGA2560°C70°C1 M
M5-512/256-12AI12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)Lattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M5LV-512/256-12AI12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)Lattice-Semiconductor-CorporationBGA256-40°C85°C1 M
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