| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M5256CP-100LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 451 K |
| M5M5256CP-100LX | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 451 K |
| M5M5256CP-55LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 55ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 454 K |
| M5M5256CP-55LX | 262144-bit (32768 x 8-bit) CMOS static RAM, 55ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 454 K |
| M5M5256CP-70LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 70ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 454 K |
| M5M5256CP-70LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 70ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 454 K |
| M5M5256CP-85LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 451 K |
| M5M5256CP-85LX | 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 451 K |
| TU24C256CP3 | CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. | distributor | PDIP | 8 | 0°C | 70°C | 47 K |
| UT62W256CPC-35L | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM | distributor | PDIP | 28 | 0°C | 70°C | 161 K |
| [1] [2] 3 [4] |
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