| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5806 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | A | - | - | - | 166 K |
| 1N5806 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | DIE | - | - | - | 46 K |
| 1N5806 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | DIE | - | - | - | 46 K |
| 1N5806US | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 166 K |
| 5962-9475806QXX | Enhanced SuMMIT XTE MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Lead finish optional. Class Q. Device type 06 (SuMMIT XTE 5V/12V). Radiation none. | distributor | PGA | 139 | - | - | 47 K |
| 5962-9475806QYX | Enhanced SuMMIT XTE MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Lead finish optional. Class Q. Device type 06 (SuMMIT XTE 5V/12V). Radiation none. | distributor | FlatPack | 140 | - | - | 47 K |
| 5962-9475806QYX | Enhanced SuMMIT XTE MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Lead finish optional. Class Q. Device type 06 (SuMMIT XTE 5V/12V). Radiation none. | distributor | FlatPack | 140 | - | - | 47 K |
| IRF5806 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V | International-Rectifier | Micro6 | 6 | -55°C | 150°C | 218 K |
| NTE5806 | Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 600V. Non-repetitive peak reverse voltage 800V | distributor | - | 2 | -65°C | 175°C | 17 K |
| UZ5806 | Zener Voltage Regulator Diode | Microsemi-Corporation | B_(WT) | - | - | - | 109 K |
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