Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5811 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | B_(WT) | - | - | - | 166 K |
1N5811 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | DIE | - | - | - | 46 K |
1N5811 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | E | - | - | - | 59 K |
1N5811US | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 59 K |
2N5811 | Complementary silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 162 K |
LC75811E | 1/8 to 1/10 Duty Dot Matrix LCD Display Controller/Driver | SANYO-Electric-Co--Ltd- | - | - | - | - | 626 K |
LC75811W | 1/8 to 1/10 Duty Dot Matrix LCD Display Controller/Driver | SANYO-Electric-Co--Ltd- | - | - | - | - | 626 K |
LC75811W | 1/8 to 1/10 Duty Dot Matrix LCD Display Controller/Driver | SANYO-Electric-Co--Ltd- | - | - | - | - | 626 K |
MRF5811LT1 | NPN silicon high-frequency transistor | Motorola | - | 4 | - | - | 155 K |
NTE5811 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
UCN5811A | BiMOS II 12-Bit serial-input, latched source drivers | Allegro-MicroSystems-Inc- | DIP | 20 | -20°C | 85°C | 156 K |
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