| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5881 | 60 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 186 K |
| 2N5881 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 180 K |
| NTE5881 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| UCN5881EP | BiMOS II dual 8-Bit latched driver with read back | Allegro-MicroSystems-Inc- | - | 44 | -20°C | 85°C | 79 K |
| US5881E | CMOS multi-purpose switch | distributor | UA | 3 | -40°C | 85°C | 118 K |
| US5881E | CMOS multi-purpose switch | distributor | - | 3 | -40°C | 85°C | 118 K |
| US5881L | CMOS multi-purpose switch | distributor | UA | 3 | -40°C | 150°C | 118 K |
| US5881L | CMOS multi-purpose switch | distributor | - | 3 | -40°C | 150°C | 118 K |
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