Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NTE5901 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
NTE5901 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
TC54VC5901ECB | Voltage detector. Detected voltage 5.9V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC5901EMB | Voltage detector. Detected voltage 5.9V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VC5901EZB | Voltage detector. Detected voltage 5.9V. Output form: CMOS output . Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VN5901ECB | Voltage detector. Detected voltage 5.9V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VN5901EMB | Voltage detector. Detected voltage 5.9V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VN5901EZB | Voltage detector. Detected voltage 5.9V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC55RP5901EMB | Low dropout positive voltage rgulator. Output voltage 5.9V. Tolerance +-1%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC55RP5901EZB | Low dropout positive voltage regulator. Output voltage 5.9V. Tolerance +-1%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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