| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KS5911 | Voice recording & reproducing LSI | Samsung-Electronic | FQP | 48 | -10°C | 50°C | 540 K |
| NTE5911 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5911 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| PWR5911 | Regulated DC/DC converter. Rated output power 500 mW, nom.input voltage 12VDC, rated output voltage +-5VDC, rated output current +-50mA. | distributor | DIP | 24 | -25°C | 85°C | 238 K |
| PWR5911 | Regulated DC/DC converter. Rated output power 500 mW, nom.input voltage 12VDC, rated output voltage +-5VDC, rated output current +-50mA. | distributor | DIP | 24 | -25°C | 85°C | 238 K |
| PWR5911H | Regulated DC/DC converter. Rated output power 500 mW, nom.input voltage 12VDC, rated output voltage +-5VDC, rated output current +-50mA. | distributor | DIP | 24 | -25°C | 85°C | 238 K |
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