| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5992B | 500 milliwatts glass silicon zener diode, zener voltage 4.7V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N5995B | 500 milliwatts glass silicon zener diode, zener voltage 6.2V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N5996B | 500 milliwatts glass silicon zener diode, zener voltage 6.8V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N5997B | 500 milliwatts glass silicon zener diode, zener voltage 7.5V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N5997B | 500 milliwatts glass silicon zener diode, zener voltage 7.5V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| MGFC36V59964A | 5.9-6.4GHz band 4W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 104 K |
| OP599A | NPN plastic silicon phototransistor | distributor | - | 2 | -40°C | 100°C | 426 K |
| OP599B | NPN plastic silicon phototransistor | distributor | - | 2 | -40°C | 100°C | 426 K |
| OP599C | NPN plastic silicon phototransistor | distributor | - | 2 | -40°C | 100°C | 426 K |
| OP599D | NPN plastic silicon phototransistor | distributor | - | 2 | -40°C | 100°C | 426 K |
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