| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MAX4275BAESA | Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 298 K |
| MAX4275BAEUA | Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. | Maxim-Integrated-Producs | microMAX | 8 | -40°C | 85°C | 298 K |
| MH16V7245BATJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 152 K |
| MH16V7245BATJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 152 K |
| MH16V725BATJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH16V725BATJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH8V7245BAZTJ-5 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
| MH8V7245BAZTJ-6 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
| MH8V725BAZTJ-5 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
| MH8V725BAZTJ-6 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
