| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H3829435BXA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
| 5962H3829435BXC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
| 5962H3829435BXX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
| 5962R3829435BXA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
| 5962R3829435BXC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
| 5962R3829435BXX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
| MH4V6445BXJJ-5 | 268435456-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 200 | 0°C | 70°C | 152 K |
| MH4V6445BXJJ-5S | 268435456-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 200 | 0°C | 70°C | 152 K |
| MH4V6445BXJJ-6 | 268435456-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 200 | 0°C | 70°C | 152 K |
| MH4V6445BXJJ-6S | 268435456-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 200 | 0°C | 70°C | 152 K |
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