| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG15N120C3 | 35A, 1200V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 139 K |
| HGTP15N120C3 | 35A, 1200V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 139 K |
| MGY25N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 153 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| RFK25N18 | 25.0A, 180V, 0.150 ohm, N-Channel Power MOSFET FN1500.3 | Intersil-Corporation | - | - | - | - | 42 K |
| RFM15N12 | 15.0A, 120V and 150V, 0.150 ohm, N-Channel Power MOSFET FN1443.1 | Intersil-Corporation | - | - | - | - | 36 K |
| RFM15N15 | 15.0A, 120V and 150V, 0.150 ohm, N-Channel Power MOSFET FN1443.1 | Intersil-Corporation | - | - | - | - | 36 K |
| RFP15N15 | 15.0A, 120V and 150V, 0.150 ohm, N-Channel Power MOSFET FN1443.1 | Intersil-Corporation | - | - | - | - | 36 K |
| STB45N10L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| STP45N10 | N-CHANNEL ENHANCEMENT MODE ULTRA DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 431 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
