Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FQB5N30 | 300V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 770 K |
FQD5N30 | 300V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 757 K |
IXFH35N30 | 300V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 168 K |
IXFM35N30 | 300V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 168 K |
IXTH35N30 | 300V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 107 K |
STP5N30 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
STP5N30 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
STP5N30FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
STP5N30L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 198 K |
STP5N30LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 198 K |
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