| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF5N5210 | HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 150°C | 118 K |
| IXFK35N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 39 K |
| IXFK55N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 386 K |
| IXFN55N50 | 500V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 386 K |
| IXFN75N50 | 500V HiPerFET power MOSFET single die MOSFET | distributor | - | 4 | -55°C | 150°C | 126 K |
| IXFR55N50 | 500V HiPerFET power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 76 K |
| IXFR55N50F | 500V HiPerRF power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 132 K |
| IXFX55N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 94 K |
| OM1805N5M | Precision positive regulator | distributor | LCC | 20 | -55°C | 150°C | 26 K |
| OM1815N5M | Precision positive regulator | distributor | LCC | 20 | -55°C | 150°C | 26 K |
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