| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M29F25611VP | CMOS 3.3V-only serial read flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | 0°C | 70°C | 499 K |
| M5M29GB160BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 197 K |
| M5M29GB160BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | -20°C | 85°C | 200 K |
| M5M29GB161BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 197 K |
| M5M29GB161BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | -20°C | 85°C | 200 K |
| M5M29GT160BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | -20°C | 85°C | 200 K |
| M5M29GT161BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | -20°C | 85°C | 200 K |
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