Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTB55N06Z | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 146 K |
MTB75N06HD | HDTMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 342 K |
MTD15N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 218 K |
MTD15N06VL | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 179 K |
MTP15N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 163 K |
MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
MTP55N06Z | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 143 K |
MTP75N06HD | HDTMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 275 K |
RFD15N06LESM | 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 95 K |
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