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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXDN55N120D11200V high voltage IGBT with optional diodedistributor-4-40°C150°C72 K
MGY25N120DInsulated gate bipolar transistorMotorola-3-55°C150°C256 K
MGY25N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--171 K

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