| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCP56-10T1 | NPN Epitaxial Transistor | ON-Semiconductor | - | 4 | - | - | 144 K |
| BZW06-10 | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
| BZW06-102 | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
| BZW06-102B | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
| BZW06-10B | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
| STW80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
| TIBPAL20R6-10CNT | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | NT | 24 | - | - | 212 K |
| TIBPAL20R6-10MFKB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FK | 28 | -55°C | 125°C | 210 K |
| TIBPAL20R6-10MJTB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | JT | 24 | -55°C | 125°C | 210 K |
| TIBPAL20R6-10MWB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | W | 24 | -55°C | 125°C | 210 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
