| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCP56-10 | NPN silicon AF transistor | Infineon-formely-Siemens | - | 4 | - | - | 131 K |
| BCX56-10 | NPN silicon AF transistor | Infineon-formely-Siemens | - | 4 | - | - | 146 K |
| CY7C43646-10AC | 5V SYNC X36 TRI BUS FIFO | Cypress-Semiconductor | - | - | - | - | 563 K |
| CY7C43666-10AC | 5V SYNC X36 TRI BUS FIFO | Cypress-Semiconductor | - | - | - | - | 563 K |
| CY7C43686-10AC | 5V SYNC X36 TRI BUS FIFO | Cypress-Semiconductor | - | - | - | - | 563 K |
| DS1236-10 | MicroManager Chip | Dallas-Semiconductor | DIP300mil | 16 | 0°C | 70°C | 323 K |
| DS1806-100 | Digital Sextet Potentiometer | Dallas-Semiconductor | DIP | 20 | -40°C | 85°C | 282 K |
| STP80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
| STP80NE06-10 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
| STW80NE06-10 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
|---|
