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60-12

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M4A3-256/160-12YI10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP208-40°C85°C1 M
M4A3-384/160-12YC12ns: high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP2080°C70°C1 M
M4A3-384/160-12YI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP208-40°C85°C1 M
M4A3-512/160-12YC12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP2080°C70°C1 M
M4A3-512/160-12YI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP208-40°C85°C1 M
M5-256/160-12YC12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)Lattice-Semiconductor-CorporationPQFP1000°C70°C1 M
M5-256/160-12YI12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)Lattice-Semiconductor-CorporationPQFP100-40°C85°C1 M
M5-320/160-12HC12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)Lattice-Semiconductor-CorporationPQFP1000°C70°C1 M
MS81V06160-12TA(401,408-word x 16-bit) FIFO memorydistributorTSOP700°C70°C266 K
MS81V10160-12TA(664,320-word x 16-bit) FIFO memorydistributorTSOP700°C70°C266 K
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