| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM48S16030BT-G/F10 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz(CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030BT-G/F8 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz(CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030BT-G/FH | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz(CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030BT-G/FL | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz(CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030T-G/F10 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM48S16030T-G/F8 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM48S16030T-G/FH | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM48S16030T-G/FL | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| MAX6030AEUR-T | Precision, low-power, low-dropout, SOT23-3 voltage reference. Output voltage 3.000V, input voltage (Vout + 200mV)V to 12.6V. | Maxim-Integrated-Producs | - | 3 | -40°C | 85°C | 170 K |
| MAX6030BEUR-T | Precision, low-power, low-dropout, SOT23-3 voltage reference. Output voltage 3.000V, input voltage (Vout + 200mV)V to 12.6V. | Maxim-Integrated-Producs | - | 3 | -40°C | 85°C | 170 K |
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