| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC5606-T1 | NPN epitaxial silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 68 K |
| LD4606A | 27.5-29.1GHz, 350W Klystron for Communications | NEC-Electronics-Inc- | - | - | - | - | 51 K |
| LNA2606L | GaAlAs on GaAs Infrared Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 21 K |
| MN86062 | CODEC LSI for Facsimile Images | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| NDP6060 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 360 K |
| NDP6060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 360 K |
| OPA606KP | Wide-Bandwidth Difet® Operational Amplifier | Burr-Brown-Corporation | 8 | - | -25°C | 85°C | 132 K |
| OPA606LM | Wide-Bandwidth Difet® Operational Amplifier | Burr-Brown-Corporation | 8 | - | -25°C | 85°C | 132 K |
| RBV-606H | Rectifier Diode | Sanken-Electric-Co- | - | - | - | - | 23 K |
| UPA606T | Nch/MOS FET (2 chips each) | NEC-Electronics-Inc- | 6pin Mini Mold | - | - | - | 62 K |
| << [4] [5] [6] [7] [8] 9 [10] [11] [12] [13] [14] >> |
|---|
