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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962D9960701TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-55°C125°C127 K
5962D9960701TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-55°C125°C127 K
5962D9960701TXX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-55°C125°C127 K
5962D9960702TXA512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-40°C125°C127 K
5962D9960702TXC512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-40°C125°C127 K
5962D9960703TXA512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-55°C125°C127 K
5962D9960703TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-55°C125°C127 K
5962D9960704TXC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-40°C125°C127 K
5962D9960704TXX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)distributorFlatpack shielded36-40°C125°C127 K
NTE6070Stud mount recfifier. Cathode to case. Peak reverse voltage 1600V. Max forward current 85A.distributorDO52-65°C200°C19 K
NTE6070Stud mount recfifier. Cathode to case. Peak reverse voltage 1600V. Max forward current 85A.distributorDO52-65°C200°C19 K
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