Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4S560832A-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
K4S560832A-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
K4S560832A-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
K4S560832B-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
K4S560832B-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
LA6083D | J-FET input dual operational amplifier | SANYO-Electric-Co--Ltd- | DIP14 | 14 | -30°C | 85°C | 105 K |
LA6083M | J-FET input dual operational amplifier | SANYO-Electric-Co--Ltd- | MFP14 | 14 | -30°C | 85°C | 104 K |
PGE60830 | EDFA gain block for DWDM applications | Ericsson-Microelectronics | - | 28 | -5°C | 70°C | 314 K |
PGE60831 | EDFA gain block for DWDM applications | Ericsson-Microelectronics | - | 14 | -5°C | 70°C | 304 K |
STK66083P | Non-chopping current drive print head driver | SANYO-Electric-Co--Ltd- | 4094 | 41 | - | - | 208 K |
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