| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AP16083C | In ra-red emitting diode. 1.6mm x 0.8mm SMT LED. Peak wavelength 940 nm. Lens type water clear. | distributor | - | 2 | -40°C | 85°C | 121 K |
| K4H560838B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TCA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TCB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4S560832B-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
| K4S560832C-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| NTE6083 | Schottky barrier recfifier. Max recurrent peak reverse voltage 45V. Max average rectified forward current 10A. | distributor | - | 2 | -65°C | 150°C | 19 K |
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