Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTB60N06HD | HDTMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 280 K |
MTP60N05HDL | HDTMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 166 K |
PHB60N06LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 71 K |
PHB60N06T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT404 | - | - | - | 68 K |
PHP60N06LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT78 | - | - | - | 71 K |
PHP60N06T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT78 | - | - | - | 64 K |
STB60N03L-10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
STB60N06-14 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
STP60N05-14 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
STP60N06-14 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
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