| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FGL60N100D | IGBT | Fairchild-Semiconductor | - | - | - | - | 438 K |
| FGL60N100D | IGBT | Fairchild-Semiconductor | - | - | - | - | 438 K |
| IXUC60N10 | 100V trench power MOSFET Q-class | distributor | ISOPLUS220 | 3 | -55°C | 175°C | 56 K |
| OM60N10SC | 100V ultra low power MOSFET | distributor | - | 3 | -55°C | 150°C | 74 K |
| R1160N101A-TR | 3-mode 200mA LDO regulator IC. Output voltage 1.0V. L active type. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 1 M |
| R1160N101B-TR | 3-mode 200mA LDO regulator IC. Output voltage 1.0V. H active type. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 1 M |
| STH60N10 | Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 246 K |
| STH60N10FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 246 K |
| STW60N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 246 K |
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