| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N6112A | Transient Voltage Suppressor | Microsemi-Corporation | E | - | - | - | 104 K |
| 1N6112AUS | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 104 K |
| HUF76112SK8 | 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET | Intersil-Corporation | - | - | - | - | 255 K |
| HYM361120GS-60 | 1M x 36bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 136 K |
| HYM361120GS-70 | 1M x 36bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 136 K |
| HYM361120S-60 | 1M x 36bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 136 K |
| HYM361120S-70 | 1M x 36bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 136 K |
| UNR6112 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
| XN06112 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
| XP06112 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
| 1 [2] [3] [4] [5] [6] [7] |
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