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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EM636327Q-55183MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM)distributorQFP1000°C70°C1 M
EM636327TQ-55183MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM)distributorTQFP1000°C70°C1 M
EM636327TQ-6166MHz 512 x 32 high speed synchronous graphic DRAM (SGRAM)distributorTQFP1000°C70°C1 M
L6363PRML READ/WRITE CHANNELSGS-Thomson-Microelectronics----86 K
NTE6363Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 1400V.distributor-2-40°C180°C25 K
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