| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM6264BLGI-10L | 8K x 8 bit CMOS static RAM, 100ns, low low power | Samsung-Electronic | SOP | 28 | -40°C | 85°C | 152 K |
| KM6264BLP-10 | 8K x 8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | DIP | 28 | 0°C | 70°C | 152 K |
| MH4S64BLG-10 | 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 586 K |
| MH4S64BLG-10 | 268435456-bit (4194304-word by 64-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 578 K |
| MH4S64BLG-10 | 268435456-bit synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 586 K |
| MH4S64BLG-7 | 268435456-bit (4194304-word by 64-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 578 K |
| MH4S64BLG-7 | 268435456-bit synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 586 K |
| MH4S64BLG-8 | 268435456-bit (4194304-word by 64-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 578 K |
| MH4S64BLG-8 | 268435456-bit synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 586 K |
| MMBZ5264BLT1 | 60 V, 2.1 mA, 225 mW, semiconductor | distributor | - | 3 | - | - | 168 K |
| [1] [2] 3 [4] [5] |
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