Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N6507 | Diode Array | Microsemi-Corporation | SEE_FACTORY | - | - | - | 21 K |
1N6507J | Diode Array | Microsemi-Corporation | DIP | - | - | - | 64 K |
MPS6507 | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 59 K |
PT6507A | 1.3VOUT 8AMP 3.3V/5V-INPUT ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION | Texas-Instruments | - | - | - | - | 291 K |
PT6507B | 1.3VOUT 8AMP 3.3V/5V-INPUT ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION | Texas-Instruments | - | - | - | - | 291 K |
PT6507C | 1.3VOUT 8AMP 3.3V/5V-INPUT ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION | Texas-Instruments | - | - | - | - | 291 K |
PT6507G | 1.3VOUT 8AMP 3.3V/5V-INPUT ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION | Texas-Instruments | - | - | - | - | 291 K |
PT6507N | 1.3VOUT 8AMP 3.3V/5V-INPUT ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION | Texas-Instruments | - | - | - | - | 291 K |
PT6507R | 1.3VOUT 8AMP 3.3V/5V-INPUT ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION | Texas-Instruments | - | - | - | - | 291 K |
SG6507J | Diode Array | Microsemi-Corporation | DIP | - | - | - | 64 K |
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