| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB3165160AT-40 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3165160AT-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3165160AT-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3165160ATL-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3165160ATL-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3165160T-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 367 K |
| HYB3165160T-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 367 K |
| M5M465160BJ-5 | CMOS 3.3V-only block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 75°C | 362 K |
| M5M465160BJ-5S | CMOS 3.3V-only block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 75°C | 362 K |
| M5M465160BJ-6 | CMOS 3.3V-only block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 75°C | 362 K |
| 1 [2] [3] [4] [5] [6] [7] [8] |
|---|
