| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6520 | PNP Epitaxial Silicon Transistor - High Voltage Transistor | Fairchild-Semiconductor | - | - | - | - | 70 K |
| 2N6520 | Ic=500mA, Vce=10V transistor | distributor | - | - | - | - | 427 K |
| 2N6520 | High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 109 K |
| H2N6520 | 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 36 K |
| HMBT6520 | Emitter to base voltage:5V; 250mA PNP epitaxial planar transistor for general purpose applications | distributor | - | 3 | - | - | 29 K |
| KSP6520 | Amplifier transistor, NPN, collector-emitter=25V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 25 K |
| MMBT6520LT1 | 350 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 167 K |
| MPS6520 | 4V, 350mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 159 K |
| STU6520 | Working peak reverse voltage: 18.8 V, 1 mA, 600 W surface mount transient voltage suppressor | distributor | SMB | 2 | -55°C | 150°C | 28 K |
| USP6520 | Amplifier transistor. Vcbo = 40V, Vceo = 25V, Vebo = 4V, Ic = 100mA, Pc = 625mW | distributor | - | 3 | 0°C | 150°C | 41 K |
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