| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 76608/9 | Pulse transformer. Turns ratio (+-2%) 3:3:2. | distributor | DIP | 4 | 0°C | 70°C | 302 K |
| K4E660812B-JCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| MCH6608 | Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 30 K |
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