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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SD669ABipolar power general purpose transistordistributor----36 K
HI669AEmitter to base voltage:5V 1.5A NPN epitaxial planar transistor for low frequency power amplifierdistributor-3--26 K
HJ669AEmitter to base voltage:5V 1.5A NPN epitaxial planar transistor for low frequency power amplifierdistributor-3--22 K
K4R271669AM-CG6256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.Samsung-ElectronicmicroBGA(mirrored CS620°C70°C3 M
K4R271669AM-CK7256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.Samsung-ElectronicmicroBGA(mirrored CS620°C70°C3 M
K4R271669AM-CK8256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.Samsung-ElectronicmicroBGA(mirrored CS620°C70°C3 M
K4R271669AN-CG6256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz.Samsung-ElectronicmicroBGA(normal CSP)620°C70°C3 M
K4R271669AN-CK7256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.Samsung-ElectronicmicroBGA(normal CSP)620°C70°C3 M
K4R271669AN-CK8256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.Samsung-ElectronicmicroBGA(normal CSP)620°C70°C3 M
MSM6669AV-Z-0580-dot LCD segment driverdistributorTCP--20°C75°C70 K
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