| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| H2N6718L | 2A 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching applications | distributor | - | 3 | - | - | 42 K |
| H2N6718V | 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching | distributor | - | 3 | - | - | 39 K |
| HI6718 | Emitter to base voltage:5V 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching | distributor | - | 3 | - | - | 22 K |
| HJ6718 | Emitter to base voltage:5V 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching | distributor | - | 3 | - | - | 22 K |
| HM6718 | Emitter to base voltage:5V; 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching | distributor | - | 3 | - | - | 31 K |
| LMH6718MA | Dual, High Output, Programmable Gain Buffer | distributor | SOIC NARROW | 8 | -40°C | 85°C | 846 K |
| LMH6718MAX | Dual, High Output, Programmable Gain Buffer | distributor | SOIC NARROW | 8 | -40°C | 85°C | 846 K |
| LMH6718MAX | Dual, High Output, Programmable Gain Buffer | distributor | SOIC NARROW | 8 | -40°C | 85°C | 846 K |
| ZHB6718 | Bipolar transistor H-bridge | Zetex-Semiconductor | SOT | 8 | -55°C | 150°C | 193 K |
| ZHB6718 | Bipolar transistor H-bridge | Zetex-Semiconductor | SOT | 8 | -55°C | 150°C | 193 K |
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