| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6802 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| HYM368020GS-60 | 8M x 36bit EDO-DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 102 K |
| HYM368020S-60 | 8M x 36bit EDO-DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 102 K |
| HYM368025GS-50 | 8M x 36bit EDO-DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 104 K |
| HYM368025GS-60 | 8M x 36bit EDO-DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 104 K |
| HYM368025S-50 | 8M x 36bit EDO-DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 104 K |
| HYM368025S-60 | 8M x 36bit EDO-DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 104 K |
| JANTX2N6802 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 231 K |
| JANTX2N6802 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| JANTXV2N6802 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 231 K |
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