Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MMDF6N03HDR2 | TMOS dual N-channel field effect transistor | Motorola | - | 8 | -55°C | 150°C | 207 K |
PHT6N03LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT223 | 4 | -55°C | 150°C | 53 K |
PHT6N03T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT223 | - | - | - | 70 K |
RFD16N03L | 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 107 K |
RFD16N03LSM | Power dissipation 90 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 80 A Voltage Vgs th max. 2 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | Fairchild-Semiconductor | - | - | - | - | 130 K |
RFD16N03LSM | 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 107 K |
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