| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD6N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 211 K |
| MTV6N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| PRN10016N1000J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N1001J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N1002J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N10R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10116N1001J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N1002J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N1101J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| WT8076N18P1 | Passive infrared (PIR) controller | distributor | PDIP | 18 | 25°C | 70°C | 48 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
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